2SD601A DGNJDZ

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TRANSISTOR (NPN) FEATURE  High h FE  Low V CE(sat)  For general amplification  Complementary to 2SB709A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 7 V I C Collector Current 100 mA P C Collector Power Dissipation 200 mW R ΘJA Thermal Resistance from Junction to Ambient 625 ℃/W Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55～+150 ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parame ter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10µA, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =2mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =10µA, I C =0 7 V Collector cut-off current I CBO V CB =20V, I E =0 0.1 µA Collector cut-off current I CEO V CE =10V, I B =0 100 µA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 µA h FE(1) V CE =2V, I C =100mA 90 DC current gain h FE(2) V CE =10V, I C =2mA 160 460 Collector-emitter saturation voltage V CE(sat) I C =100mA, I B =10mA 0.3 V Transition frequency f T V CE =10V,I C =2mA,f=200MHz 150 MHz Collector output capacitance C ob V CB =10V,I E =0,f=1MHz 3.5 pF CLASSIFICATION of h FE(2) Rank Q R S Range 160-260 210-340 290-460 Marking ZQ ZR ZS SOT-23 1. BASE 2. EMITTER 3. COLLECTOR DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 100 0.1 1 10 100 1 10 100 100 150 200 250 300 350 400 450 500 550 600 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0 1 2 3 4 5 6 7 8 9 10 11 1 2 13 140 1 10 100 100 120 140 200 β=10 Ta=25℃ Ta=100℃ COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ Ta=100℃ β=10 ICVBEsat —— VCE=10V Ta=25℃ Ta=100 o C BASE-EMITTER VOLTAGE VBE(V) COLLECTOR CURRENT IC (mA) IC —— VBE f=1MHz IE=0 / IC=0 Ta=25 o C Cob Cib VCB / VEBCob / Cib —— REVERSE VOLTAGE V (V) CAPACITANCE C (pF) Ta=25 o C DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=100 o C VCE=10V IChFE —— COLLECTOR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta 10uA 9uA 8uA 7uA 6uA 5uA 4uA 3uA 2uA COMMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) I B =1uA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCEsat —— IC Typical Characteristics Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

Symbol Dimensions In InchesDimensions In Millimeters Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com

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