2SD601A_11 SECOS

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

0.1A , 60V NPN Plastic-Encapsulate Transistor 04-Mar-2011 Rev. B Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE /circle6 High forward current transfer ratio h FE /circle6 Low collector to emitter saturation voltage V CE(sat) CLASSIFICATION OF h FE Product-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Range 160~260 210~340 290~460 Marking Code ZQ ZR ZS

PACKAGE INFORMATION

SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (T A = 25 °C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage V CBO 60 V Collector to Emitter Voltage V CEO 50 V Emitter to Base Voltage V EBO 7 V Collector Current - Continuous I C 100 mA Collector Power Dissipation P C 200 mW Junction, Storage Temperature T J, T STG 150, -55~150 ° C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 60 - - V I C =10µA, I E=0 Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V I C =2mA, I B=0 Emitter to Base Breakdown Voltage V (BR)EBO 7 - - V I E=10µA, I C =0 Collector Cut-Off Current I CBO - - 0.1 µA V CB =20V, I E=0 Emitter Cut-Off Current I EBO - - 100 µA V EB =10V, I C =0 Collector to Emitter Saturation Voltage VCE(sat) - - 0.3 V I C =100mA, I B=10mA hFE (1) 160 - 460 V CE =10V, I C =2mA DC Current Gain hFE (2) 90 - - VCE =2V, I C =100mA Transition Frequency f T - 150 - MHz VCE =10V, I C =2mA, f=200MHz Collector Output Capacitance C ob - 3.5 - pF V CB =10V, I E=0, f=1MHz SOT-23 Top View A L C B D G H JF K E 1 2 A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50