2SD596-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • High DC Current gain.
  • Complimentary to 2SB624-HF 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 700 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 25 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 30 V , IE= 0 100 Emitter cut-off current IEBO VEB= 5V , IC=0 100 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=700 mA, IB=70mA 0.6 Base - emitter saturation voltage (Note.1) VBE(sat) IC=700 mA, IB=70mA 1.2 Base - emitter voltage (Note.1) VBE VCE= 6V, IC= 10mA 0.6 0.7 hFE(1) VCE= 1V, IC= 100mA 110 400 hFE(2) VCE= 1V, IC= 700mA 50 Collector output capacitance Cob VCB= 6V, IE= 10mA , f=10MHz 12 pF Transition frequency fT VCE= 6V, IC= 10mA 170 MHz DC current gain (Note.1) V nA V Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1)
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Type 2SD596-DV1-HF 2SD596-DV2-HF 2SD596-DV3-HF 2SD596-DV4-HF 2SD596-DV5-HF Range 110-180 135-220 170-270 200-320 250-400 Marking DV1 F DV2 F DV3 F DV4 F DV5 F NPN Transistors 2SD596-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 0111.0 100 001011 100 150 200 250 300 001011 100 150 200 250 300 350 400 450 500 550 600 0 25 50 75 100 125 150 100 150 200 250 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 100 150 200 250 300 350 100 120 140 160 180 0.1 100 f=1MHz IE=0 / IC=0 Ta=25 o C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) VCB / VEBCob / Cib — — Cib Cob TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=6V Ta=25 o C IC fT — — 700 COMMON EMITTER VCE= 1V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE — — COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ Pc — — Ta 700 COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ Ta=100℃ β=10 ICVBEsat — — 700 700 Ta=25℃ Ta=100℃ β=10 VCEsat — — IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) COMMON EMITTER Ta=25℃ 500uA 450uA 400uA 350uA 300uA 250uA 200uA 150uA 100uA IB=50uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) Static Characteristic COMMON EMITTER VCE=6V Ta=25℃ Ta=100 o C BASE-EMITTER VOLTAGE VBE(V) COLLECTOR CURRENT IC (mA) IC —— VBE NPN Transistors 2SD596-HF