2SB598 SANYO
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No. C268¢ 2SB598/2SD545 _ Silicon Epitaxial Planar Type Transistor CY For Aupio FREQUENCY PowER Amp., CONVERTERS, SANYO ! ELECTRONIC GOVERNORS The 2SB598NP/2SD545NP are complementary pair transistors that are packaged in small packages and are large in current capacity and excellent in saturation characteristic and hFE linearity. In addition to the above application areas, they are also suited for use in desk-top calculator power supplies, relay drivers. Absolute Maximum Ratings/Ta = 25°C 2SB598 2SD545 unit Collector to base voltage VcBo -25 25 Vv Collector to emitter voltage VCEO -25 25 Vv Emitter to base voltage VEBO -5 5 Vv Collector current Ic -1.0 1.0 A icp -1.5 15 A Collector dissipation Po 600 600 mW ) Junction temperature Tj 150 150 °c Storage temperature Tstg —55~+150 —55~ +150 °c 2SB598 2SD545 Electrical Characteristics/Ta = 25°C min typ max | min typ max unit Collector cutoffcurrent CBO —-VcB = (-)20V, IE =0 -1.0 1.0 yA Emitter cutoff current lEBO VEB=(-)4V, Ic=0 1.0 1.0 pA Collector to base ViericBo!c = (-)10 HA, Ie = 0 -25 25 7 breakdown voltage Collector to emitter ViBR)CEO!c = (—)1 mA, RBE = Q 25 25 Vv breakdown voltage Emitter to base V(BR)EBO !E= (—)10 nA, Ic = 0 5 5 Vv breakdown voltage DC current gain hee(t)* Vce=(-)2V, Ic=(—)50mA: 60 560 60 560 heel2) VceE=(-)2V, Ic=(—)1Alpulse) 30 30 Gain bandwidth product fT Voce =(—)10V, Ic = (—)50mA 180 180 MHz Common base Cob Vc = (—)10V, f = 1 MHz 25 15 pF output capacitance Collector to emitter VCE(sat) 1 = (-)500mA, IB = (—)50mA 0.15 -0.5 0.1 03 V saturation voltage Base to emitter VeElsat) !¢= (-)500mA, Ip =(-)50mMA = 0.85 —1.2 085 12 V ) saturation voltage * hFE(1) is classified by 2 V, 50 mA as follows:
60 D 120 100 E 200 160 F 320 280 G 560
. ise Outline & 20 O44 is ~ Cop. g ag es | 200 ina wo! ]t | 2 0) S LL 5.0 1. 13.2 _| Leos JEDEC: TO-92 B: Base < Ambient temperature, Ta —°C SANYO: NP Br Emitter These specifications are subject to change without notice. ee