2SD2693A PANASONIC

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Technical content

1Publication date: July 2004 SJD00322AED 2SD2693A Silicon NPN triple diffusion planar type For power amplification ■ Features

  • Wide safe oeration area
  • Satisfactory linearity of forward current transfer ratio hFE
  • Low collector-emitter saturation voltage VCE(sat)
  • Full-pack package which can be installed to the heat sink with one screw. ■ Absolute Maximum Ratings TC = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C 1.4±0.2 1.6±0.2 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 123 2.6±0.1 2.9±0.2 4.6±0.2 φ 3.2±0.1 3.0±0.5 9.9±0.3 15.0±0.513.7±0.2 4.2±0.2 Solder Dip Unit: mm 1: Base 2: Collector 3: Emitter Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 80 V Collector-emitter voltage (Base open) V CEO 80 V Emitter-base voltage (Collector open) V EBO 6V Collector current I C 3A Peak collector current * ICP 5A Collector power dissipation P C 25 W Ta = 25°C 2.0 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) *1 VCEO IC = 30 mA, IB = 08 0V Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0 100 µA Collector-emitter cutoff current (Base open) ICEO VCE = 80 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 01 m A Forward current transfer ratio *1 hFE1 *2 VCE = 4 V, IC = 1 A 70 250  hFE2 VCE = 4 V, IC = 3 A 10 Collector-emitter saturation voltage *1 VCE(sat) IC = 3 A, IB = 0.375 A 0.8 V Transition frequency f T VCE = 10 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time t on IC = 1 A, Resistance loaded 0.1 µs Storage time t stg IB1 = 0.1 A, IB2 = − 0.1 A 2.3 µs Fall time t f VCC = 50 V 0.3 µs Rank Q P hFE1 70 to 150 120 to 250 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Internal Connection B C ENote) *: Non-repetitive peak collector current

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). Consult our sales staff in advance for information on the following applications:

  • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
  • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP