Download PDFXN01558 PANASONIC
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1Publication date: December 2003 SJJ00264BED Composite Transistors XN01558 Silicon NPN epitaxial planar type For low-frequency amplification ■ Features
- Two elements incorporated into one package (Emitter-coupled transistors)
- Reduction of the mounting area and assembly cost by one half ■ Basic Part Number
- 2SD2623 × 2 ■ Absolute Maximum Ratings Ta = 25°C 1: Collector (Tr1) 4: Emitter 2: Collector (Tr2) 5: Base (Tr1) 3: Base (Tr2) EIAJ: SC-74A Mini5-G1 Package Unit: mm 2.90 1.9±0.1 0.16+0.10 –0.06 2.8+0.2 –0.3 1.1+0.3 –0.1 1.10 to 0.1 +0.2 –0.1 1.50(0.65) 0.4±0.2 +0.25 –0.05 (0.95) (0.95) 0.30+0.10 –0.05 543 +0.20 –0.05 10˚ Tr1Tr2 ■ Electrical Characteristics Ta = 25°C ± 3°C Internal Connection Marking Symbol: 4Z VV 1 kΩ Ron = VB × 1 000 (Ω) VA − VB f = 1 kHz V = 0.3 V VB IB = 1 mA VA Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 25 V Collector-emitter voltage (Base open) V CEO 20 V Emitter-base voltage (Collector open) V EBO 12 V Collector current I C 0.5 A Peak collector current I CP 1A Total power dissipation P T 300 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 02 5 V Collector-emitter voltage (Base open) V CEO IC = 1 mA, IB = 02 0 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 01 2 V Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 100 nA Forward current transfer ratio *1 hFE VCE = 2 V, IC = 0.5 A 200 800 hFE ratio *1, 2 hFE(Small VCE = 2 V, IC = 0.5 A 0.50 0.99 /Large) Collector-emitter saturation voltage *1 VCE(sat) IC = 0.5 A, IB = 20 mA 0.14 0.40 V Base-emitter saturation voltage *1 VBE(sat) IC = 0.5 A, IB = 50 mA 1.2 V Transition frequency f T VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 10 pF (Common base, input open circuited) ON resistanse *3 Ron 1.0 Ω Note) 1. Measuring m ethods are based on JAPANESE INDUSTRIAL *3: Ron test circuit STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Ratio between one and another device
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VBE(sat) IC hFE IC Cob VCB PT Ta IC VCE VCE(sat) IC 0 160 40 120 80 500 200 400 100 300 Total power dissipation PT (mW) Ambient temperature Ta (°C) 06 15 24 3 0.8 Collector-emitter voltage VCE (V) Collector current IC (A) 0.6 0.4 0.2 IB = 4.0 mA 1.0 mA 1.5 mA 2.0 mA 2.5 mA 3.0 mA 3.5 mA 0.5 mA Ta = 25°C IC / IB = 25 Ta = 75°C 25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 10−3 10−2 10−1 11 0 1 0 3102 10−1 10 10 2 105103 104 IC / IB = 10
1 Ta = −25°C25°C
75°C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (µA) 10−2 10−1 120 240 360 480
600 VCE = 2 V
25°C −25°C Forward current transfer ratio hFE Collector current IC (mA) Ta = 75°C 10−1 11 0 1 0 2 103 102 01 0 2 0 3 0 Collector-base voltage VCB (V) f = 1 MHz Ta = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF)
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