Download PDF2SD2621 PANASONIC
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1Publication date: June 2004 SJC00307AED 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification ■ Features
- High forward current transfer ratio hFE
- Low collector-emitter saturation voltage VCE(sat)
- High emitter-base voltage (Collector open) VEBO ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 100 V Collector-emitter voltage (Base open) V CEO 100 V Emitter-base voltage (Collector open) V EBO 15 V Collector current I C 20 mA Peak collector current I CP 50 mA Collector power dissipation P C 100 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 0 100 V Collector-emitter voltage (Base open) V CEO IC = 1 mA, IB = 0 100 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 01 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0 1.0 µA Forward current transfer ratio h FE VCE = 10 V, IC = 2 mA 400 1 200 Collector-emitter saturation voltage V CE(sat) IC = 10 mA, IB = 1 mA 0.05 0.20 V Transition frequency f T VCB = 10 V, IE = −2 mA, f = 200 MHz 200 MHz Noise voltage NV V CE = 10 V, IC = 1 mA, GV = 80 dB 80 mV Rg = 100 kΩ, Function = FLAT ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Marking Symbol: 3B 1.20±0.050.52±0.03 0 to 0.01 0.15 max. 0.15 min. 0.80±0.050.15 min. 0.33 (0.40)(0.40) 0.80±0.05 1.20±0.05 +0.05 –0.02 0.10+0.05 –0.02 0.23+0.05 –0.02 1 : Base 2 : Emitter 3 : Collector SSSMini3-F1 Package
2 SJC00307AED
IC VBE hFE IC Cob VCB PC Ta IC VCE VCE(sat) IC 0 80 120 40 120 100 Ambient temperature Ta (°C) Collector power dissipation PC (mW) 01 2 10826 4 Ta = 25°C IB = 100 µA 90 µA 70 µA 60 µA 50 µA 40 µA 30 µA 20 µA 10 µA 80 µA Collector-emitter voltage VCE (V) Collector current IC (mA) 0.1 1 10 100 1000 0.01 0.1 IC / IB = 10 Ta = 85°C 25°C −25°C Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) 120 100 VCE = 10 V Ta = 85°C 25°C −25°C Base-emitter voltage VBE (V) Collector current IC (mA) 1 10 100 1 000 800 600 400 200 VCE = 10 V Ta = 85°C 25°C −25°C Collector current IC (mA) Forward current transfer ratio hFE 04 0 10 30 20 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF)
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