2SD2620J PANASONIC

Document overview

Silicon NPN epitaxial planer type For low-frequency amplification I Features

High forward current transfer ratio hFE
Low collector to emitter saturation voltage VCE(sat)
High emitter to base voltage V BEO
SS-mini type package I Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 60 V, IE = 0 0.1 µA ICEO VCE = 60 V, IB = 0 1.0 µA Collector to base voltage V CBO IC = 10 µA, IE = 0 100 V Collector to emitter voltage V CEO IC = 1 mA, IB = 0 100 V Emitter to base voltage V EBO IE = 10 µA, IC = 01 5 V Forward current transfer ratio h FE VCE = 10 V, IC = 2 mA 400 1 200 Collector to emitter saturation voltage V CE(sat) IC = 10 mA, IB = 1 mA 0.05 0.2 V Transition frequency f T VCB = 10 V, IE = −2 mA, f = 200 MHz 200 MHz Noise voltage NV V CE = 10 V, IC = 1 mA, GB = 80 dB 80 mV Rg = 100 kΩ, Function = FLAT I Electrical Characteristics Ta = 25°C ± 3°C Marking Symbol: 3B Parameter Symbol Rating Unit Collector to base voltage V CBO 100 V Collector to emitter voltage V CEO 100 V Emitter to base voltage V EBO 15 V Peak collector current I CP 50 mA Collector current I C 20 mA Collector power dissipation P C 125 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C 0.27±0.02 0.12+0.03 –0.01 0.80±0.05(0.80) 0.85 1.60±0.05 0 to 0.02 0.10 max. 0.70+0.05 –0.03 (0.375) 1.60+0.05 –0.03 1.00±0.05 (0.50)(0.50) +0.05 –0.03 1: Base 2: Emitter EIAJ: SC-81 3: Collector SS-Mini Type Package