2SD2598 PANASONIC

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planer type darlington For low-frequency amplification n Features l Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. l A shunt resistor is omitted from the driver. l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO ICP IC PC *1 Tj Tstg Ratings 750 500 150 –55 ~ +150 Unit V V V mA mA W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Symbol I CBO IEBO V CBO V CEO V EBO hFE *1 V CE(sat) V BE(sat) fT Conditions V CB = 25V , IE = 0 V EB = 4V , IC = 0 IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 V CE = 10V , IC = 500mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = 0.5mA*2 V CB = 10V , IE = –50mA, f = 200MHz min 4000 typ 200 max 100 100 20000 2.5 3.0 Unit nA nA V V V V V MHz *1hFE Rank classification Rank Q R hFE 4000 ~ 10000 8000 ~ 20000 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Internal Connection B C E

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC C ob — V CB 01 2 10826 4 900 750 600 450 300 150 Ta=25˚C IB=150mA 75mA 50mA 125mA 100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=1000

25˚C 75˚C Ta=–25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 102 103 105 104 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 9.0 7.5 6.0 4.5 3..0 1.5 f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 160 40 120 80 14020 100 60 2.0 1.6 1.2 0.8 0.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W )