2SD2565 PANASONIC

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN triple diffusion planer type For high voltage-withstand switching n Features l High collector to base voltage VCBO . l High collector to emitter voltage VCEO . l Large collector power dissipation PC . l Low collector to emitter saturation voltage VCE(sat). l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO ICP IC PC *1 Tj Tstg Ratings 400 400 0.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol V CBO V CEO V EBO hFE V CE(sat) V BE(sat) fT C ob ton tstg tf Conditions IC = 100mA, IE = 0 IC = 500mA, IB = 0 IE = 100mA, IC = 0 V CE = 5V , IC = 30mA IC = 250mA, IB = 50mA* IC = 250mA, IB = 50mA* V CB = 30V , IE = –20mA, f = 200MHz V CB = 30V , IE = 0, f = 1MHz IC = 100mA IB1 = 10mA, IB2 = –10mA V CC = 200V min 400 400 typ 0.8 3.7 0.6 max 1.5 1.5 Unit V V V V V MHz pF mS mS mS *1 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) * Pulse measurement

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC C ob — V CB 01 2 10826 4 300 250 200 150 100 Ta=25˚C IB=10mA 6mA 7mA 8mA 9mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3

10 IC /IB=5

25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3

100 IC /IB=5

Ta=–25˚C 25˚C 75˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 1 10 100 10003 30 300 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1 3 10 30 100 f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 160 40 120 80 14020 100 60 2.0 1.6 1.2 0.8 0.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W )