2SD2556 PANASONIC

Document overview

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Technical content

Silicon NPN epitaxial planer type For power switching I Features

  • High forward current transfer ratio h FE
  • Allowing supply with the radial taping
  • Low collector to emitter saturation voltage V CE(sat): < 0.5 V I Absolute Maximum Ratings TC = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO 130 V Collector to emitter voltage V CEO 80 V Emitter to base voltage V EBO 7V Peak collector current I CP 10 A Collector current I C 5 A Collector power TC = 25°CP C 10 W dissipation Ta = 25°C1 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 100 V, IE = 01 0 µA Emitter cutoff current I EBO VEB = 5 V, IC = 05 0 µA Collector to emitter voltage V CEO IC = 1 mA, IB = 08 0 V Forward current transfer ratio h FE1 VCE = 2 V, IC = 0.1 A 45 hFE2 * VCE = 2 V, IC = 2 A 90 260 Collector to emitter saturation voltage V CE(sat) IC = 4 A, IB = 0.2 A 0.5 V Base to emitter saturation voltage V BE(sat) IC = 4 A, IB = 0.2 A 1.5 V Transition frequency f T VCE = 10 V, IC = − 0.5 A, f = 10 MHz 30 MHz Turn-on time t on IC = 2 A, IB1 = 0.2 A, IB2 = − 0.2 A 0.5 µs Storage time t stg VCC = 50 V 1.5 µs Fall time t f 0.15 µs 6.5±0.1 2.3±0.1 (5.3) (4.35) (3.0) (1.8) (5.5) 0.75±0.1 2.3±0.1 4.6±0.1 123 0.5±0.1 1.0±0.1 0.1±0.05 0.5±0.1 0.8 max. 1.0±0.2 7.3±0.1 1.8±0.1 2.5±0.1 5.3±0.1 4.35±0.1 1: Base 2: Collector 3: Emitter U Type Package Internal Connection B C E Note) *: Rank classification Rank P Q hFE2 130 to 260 90 to 180