2SD2544 PANASONIC

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Technical content

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio n Features l High foward current transfer ratio hFE l Satisfactory linearity of foward current transfer ratio hFE l Allowing supply with the radial taping n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 * hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 60V , IE = 0 V EB = 7V , IC = 0 IC = 10mA, IB = 0 V CE = 2V , IC = 0.8A V CE = 2V , IC = 2A IC = 2A, IB = 50mA IC = 2A, IB = 50mA V CE = 10V , IC = 0.5A, f = 10MHz IC = 2A, IB1 = 50mA, IB2 = –50mA, V CC = 50V min 500 typ 1000 0.5 3.6 1.1 max 2000 0.5 1.5 Unit mA mA V V V MHz ms ms ms *hFE1 Rank classification Rank Q P hFE1 500 to 1200 800 to 2000 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter MT4 Type Package 1.010.0–0.2 0.55–0.1 2.5–0.2 2.5 –0.2 4.2–0.2 13.0–0.2 2.5–0.2 18.0–0.5 Solder Dip 5.0–0.1 2.25–0.2 1.2–0.1 0.65–0.1 0.55–0.1 C1.0 90° C1.0 123 1.05–0.10.35–0.1

PC —T a I C —V CE V BE(sat)—I C V CE(sat)—I C hFE —I C fT —I C C ob —V CB Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =2.0W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚CIB=100mA 50mA 20mA 10mA 6mA 4mA 2mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.1 0.3 1 3 10 0.01 0.1 0.03 0.3 IC /IB=20 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.1 0.03 0.3 IC /IB=20 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3 VCE =5V 25˚C –25˚C TC =100˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 1000 100 300 VCE =10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 3 10 30 100 1000 100 300 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 ICP IC 10ms t=1ms DC Non repetitive pulse TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A)

R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)