2SD2538 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN triple diffusion planer type Darlington For power amplification I Features

  • High forward current transfer ratio h FE
  • Full-pack package which can be installed to the heat sink with one screw I Absolute Maximum Ratings TC = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO 60 V Collector to emitter voltage V CEO 60 V Emitter to base voltage V EBO 5V Peak collector current I CP 4A Collector current I C 2 A Collector power TC = 25°CP C 35 W dissipation Ta = 25°C2 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 60 V, IE = 01 m A ICEO VCE = 30 V, IB = 02 m A Emitter cutoff current I EBO VEB = 5 V, IC = 02 m A Collector to emitter voltage V CEO IC = 30 mA, IB = 06 0V Forward current transfer ratio h FE1 VCE = 4 V, IC = 1 A 1 000 hFE2 * VCE = 4 V, IC = 2 A 2 000 10 000 Collector to emitter saturation voltage V CE(sat) IC = 2 A, IB = 8 mA 2.5 V Base to emitter voltage V BE VCE = 4 V, IC = 2 A 2.8 V Transition frequency f T VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time t on IC = 2 A, IB1 = 8 mA, IB2 = −8 mA 0.5 µs Storage time t stg VCC = 50 V 4.0 µs Fall time t f 1.0 µs 1.4±0.2 1.6±0.2 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 123 2.6±0.1 2.9±0.2 4.6±0.2 φ 3.2±0.1 3.0±0.5 9.9±0.3 15.0±0.513.7±0.2 4.2±0.2 Solder Dip 1: Base 2: Collector 3: Emitter TO-220D Full Pack Package Internal Connection B C E Note) *: Rank classification Rank P Q hFE2 4 000 to 10 000 2 000 to 5 000