2SD2537_15 KEXIN

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www.kexin.com.cn 1 Transistors NPN Transistors 2SD2537 ■ Features

  • High DC current gain.
  • High emitter-base voltage.
  • Low saturation voltage. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 Emitter - Base Voltage VEBO 9 Collector Current - Continuous IC 1.2 Collector Current - Pulse (Note.1) ICP 2 0.5 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Collector Power Dissipation PC W Note.1: Single pulse Pw=10ms ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 25 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 9 Collector-base cut-off current ICBO VCB= 30 V , IE= 0 0.3 Emitter cut-off current IEBO VEB= 9 V , IC=0 0.3 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=10mA 0.3 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=10mA 1.2 DC current gain hFE VCE= 5V, IC= 500 mA 820 2700 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 20 pF Transition frequency fT VCE= 10V, IE= -50mA,f=100MHz 200 MHz V V uA ■ Classification of hfe Type 2SD2537-V 2SD2537-W Range 820-1800 1200-2700 Marking DV DW

www.kexin.com.cn2 Transistors NPN Transistors 2SD2537 ■ Typical Characterisitics COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics( ) 0.4 0.8 1.2 1.6 2.0 Ta=25°C IB=00.2µA 0.4µA 0.6µA 0.8µA 1.0µA 1.2µA 1.4µA 1.6µA 1.8µA 2.0µA COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Ground emitter output characteristics ( ) 0.4 0.8 1.2 1.6 2.0 IB=0 0.5mA 5.0mA 1.0mA 1.5mA 2.0mA 2.5mA 3.0mA3.5mA 4.0mA 4.5mA Ta=25°C Pulsed COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.3 Ground emitter propagation characteristics 1000 2000 200 500 100 Ta =100 −25 VCE=5V Pulsed DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) 100 200 500 1000 2000 5000 10000 2 5 10 20 50 100 200 500 1000 2000 Ta=25°C Pulsed VCE=10V DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ) 100 200 500 1000 2000 5000 10000 2 5 10 20 50 100 200 500 1000 2000 Pulsed Ta=100°C 25°C −25°C VCE=5V COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 100 200 500 1000 2 5 10 20 50 100 200 500 1000 2000 Ta=25°C Pulsed IC/IB=100 COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 100 200 500 1000 2 5 10 20 50 100 200 500 1000 2000 Pulsed Ta=100°C 25°C −25°C IC/IB=50 BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.8 Base-emitter saturation voltage vs. collector current ( ) 100 200 500 1000 2000 5000 10000 2 5 10 20 50 100 200 500 1000 2000 Ta=25°C Pulsed 100 IC/IB=10 BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.9 Base-emitter saturation voltage vs. collector current ( ) 100 200 500 1000 2000 5000 10000 2 5 10 20 50 100 200 500 1000 2000 Pulsed 100 IC/IB=50 Ta= −25°C

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD2537 ■ Typical Characterisitics TRANSITION FREQUENCY : fT (MHz) EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current 100 200 500 1000 2000 5000 1 2 5 10 20 50 100 200 500 1000 Pulsed VCE=10V Ta=25°C COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.11 Collector output capacitance vs. collector-base voltage 100 200 500 1000 0.1 0.2 0.5 1 2 5 10 20 50 100 f=1MHz IE=0A Ta=25°C