2SD2530 PANASONIC

Document overview

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Technical content

Silicon NPN triple diffusion planer type Darlington For power amplification I Features

  • High forward current transfer ratio h FE
  • Allowing supply with the radial taping
  • Low collector to emitter saturation voltage V CE(sat): < 2.5 V I Absolute Maximum Ratings TC = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO 100 V Collector to emitter voltage V CEO 100 V Emitter to base voltage V EBO 5V Peak collector current I CP 10 A Collector current I C 5 A Collector power TC = 25°CP C 15 W dissipation Ta = 25°C2 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics TC = 25°C ± 2°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 100 V, IE = 0 100 µA ICEO VCE = 80 V, IB = 0 100 µA Emitter cutoff current I EBO VEB = 5 V, IC = 05 m A Collector to emitter voltage V CEO IC = 10 mA, IB = 0 100 V Forward current transfer ratio h FE1 VCE = 4 V, IC = 2 A 2 000 15 000 hFE2 VCE = 4 V, IC = 4 A 500 Collector to emitter saturation voltage V CE(sat) IC = 2 A, IB = 2 mA 1.5 V IC = 4 A, IB = 16 mA 2.5 V Base to emitter saturation voltage V BE(sat) IC = 4 A, IB = 16 mA 2.5 V Transition frequency f T VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time t on IC = 4 A, IB1 = 16 mA, IB2 = −16 mA 0.27 µs Storage time t stg VCC = 50 V 2.9 µs Fall time t f 1.0 µs 10.0±0.2 0.65±0.1 0.35±0.1 2.5±0.2 123 0.65±0.1 1.2±0.1 1.48±0.2 2.25±0.2 C 1.0 0.55±0.1 0.55±0.1 2.5±0.2 1.05±0.1 13.0±0.2 4.2±0.2 18.0±0.5 Solder Dip 5.0±0.1 2.5±0.1 90° 1.0±0.2 1: Base 2: Collector 3: Emitter Internal Connection B C E