2SD2528 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio n Features l High foward current transfer ratio hFE l Satisfactory linearity of foward current transfer ratio hFE l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC IB PC Tj Tstg Ratings 2.0 150 –55 to +150 Unit V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE * V CE(sat) fT ton tstg tf Conditions V CB = 80V , IE = 0 V EB = 6V , IC = 0 IC = 25mA, IB = 0 V CE = 4V , IC = 1A IC = 4A, IB = 0.1A V CE = 12V , IC = 0.4A, f = 10MHz IC = 4A, IB1 = 0.08A, IB2 = – 0.08A, V CC = 50V min 500 typ 0.4 2.0 0.6 max 100 100 2000 0.3 Unit mA mA V V MHz ms ms ms *hFE Rank classification Rank P Q hFE 800 to 2000 500 to 1200 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package 9.9–0.3 15.0–0.513.7–0.2 4.2–0.2 4.6–0.2 2.9–0.2 0.8–0.1 1.4–0.2 f3.2–0.1 2.6–0.1 0.55–0.15 2.54–0.3 5.08–0.5 3.0–0.5 1.6–0.2

PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (1) (2) (3) (4) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (A) 10–1 11 0 10–3 10–2 10–1 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 10–1 11 0 10–2 10–1 102 IC /IB=50 Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 10–2 10–1 11 0 104 103 102 Collector current IC (A) Forward current transfer ratio hFE 100 300 VCE =12V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 08 26 4715 3 0.01 0.03 0.1 0.3 100 Pulsed tw =1ms Duty cycle=1% I C /IB=50 (IB1=–IB2) VCC =50V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 3 10 30 100 0.1 0.3 Non repetitive pulse TC =25˚C ICP IC 10ms t=1ms Collector to emitter voltage VCE (V) Collector current IC (A)