2SD2527 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio n Features l High foward current transfer ratio hFE l Satisfactory linearity of foward current transfer ratio hFE l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC IB PC Tj Tstg Ratings 2.0 150 –55 to +150 Unit V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Storage time Symbol I CBO ICEO IEBO V CEO hFE * V CE(sat) fT tstg Conditions V CB = 80V , IE = 0 V CE = 40V , IB = 0 V EB = 6V , IC = 0 IC = 25mA, IB = 0 V CE = 4V , IC = 0.8A IC = 3A, IB = 0.075A V CE = 12V , IC = 0.3A, f = 10MHz IC = 3A, IB1 = 0.06A, IB2 = – 0.06A, VCC = 50V min 500 typ max 100 100 100 2000 0.7 Unit mA mA mA V V MHz ms *hFE Rank classification Rank Q P hFE 500 to 1200 800 to 2000 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package 9.9–0.3 15.0–0.513.7–0.2 4.2–0.2 4.6–0.2 2.9–0.2 0.8–0.1 1.4–0.2 f3.2–0.1 2.6–0.1 0.55–0.15 2.54–0.3 5.08–0.5 3.0–0.5 1.6–0.2

IC —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 01 2 10826 4 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 TC =25˚C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA Collector to emitter voltage VCE (V) Collector current IC (A) Base to emitter voltage VBE (V) Collector current IC (A) 10–2 10–1 11 0 10–3 10–2 10–1 IC /IB=40 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 10–2 10–1 11 0 104 103 102 VCE =4V Collector current IC (A) Forward current transfer ratio hFE 100 300 VCE =12V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 08 26 4 0.01 0.03 0.1 0.3 100 Pulsed tw =1ms Duty cycle=1% I C /IB=40 (IB1=–IB2) VCC =50V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 3001001033 0 0.1 0.3 Non repetitive pulse TC =25˚C 10ms t=1ms ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)