2SD2486 PANASONIC

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Technical content

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio n Features l High forward current transfer ratio hFE which has satisfactory linearity l Low collector to emitter saturation voltage VCE(sat) l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC IBP PC Tj Tstg Ratings 150 –55 to +150 Unit V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 * hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 60V , IE = 0 V EB = 7V , IC = 0 IC = 10mA, IB = 0 V CE = 2V , IC = 0.8A V CE = 2V , IC = 2A IC = 2A, IB = 50mA IC = 2A, IB = 50mA V CE = 10V , IC = 0.5A, f = 10MHz IC = 2A, IB1 = 50mA, IB2 = –50mA, V CC = 50V min 500 typ 1000 0.5 3.6 1.1 max 2000 0.5 1.5 Unit mA mA V V V MHz ms ms ms *hFE1 Rank classification Rank Q R hFE1 500 to 1200 800 to 2000 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1

PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =2W) (1) (2) (3) (4) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 3.0 2.5 2.0 1.5 1.0 0.5 IB=5.0mA 0.5mA 1.0mA 1.5mA 2.0mA 2.5mA 3.0mA 4.0mA TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=40 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=40 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 30000 100000 VCE =2V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 05 413 2 0.01 0.03 0.1 0.3 100 Pulsed tw =1ms Duty cycle=1% I C /IB=40 (IB1=–IB2) VCC =50V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC 10ms t=1ms DC Collector to emitter voltage VCE (V) Collector current IC (A)