2SD2466 PANASONIC

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2SD2466, 2SD2466A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1604 n Features l Low collector to emitter saturation voltage VCE(sat) l High-speed switching l Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 150 –55 to +150 Unit V V V A A W 2SD2466 2SD2466A 2SD2466 2SD2466A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT C ob ton tstg tf Conditions V CB = 40V , IE = 0 V CB = 50V , IE = 0 V EB = 5V , IC = 0 IC = 10mA, IB = 0 V CE = 2V , IC = 0.1A V CE = 2V , IC = 3A IC = 10A, IB = 0.33A IC = 10A, IB = 0.33A V CE = 10V , IC = 0.5A, f = 10MHz V CB = 10V , IE = 0, f = 1MHz IC = 3A, IB1 = 0.1A, IB2 = – 0.1A, V CC = 20V min typ 120 200 0.3 0.4 0.1 max 260 0.6 1.5 Unit mA mA V V V MHz pF ms ms ms 2SD2466 2SD2466A 2SD2466 2SD2466A *hFE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 Unit: mm 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package 9.9–0.3 231 4.6–0.2 2.9–0.2 2.6–0.1 2.54–0.2 0.75–0.1 1.2–0.15 5.08–0.4 15.0–0.313.7 +0.5 –0.2 f3.2–0.1 3.0–0.2 8.0–0.24.1–0.2 Solder Dip 1.45–0.15 0.7–0.1

Power Transistors 2SD2466, 2SD2466A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =2.0W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 06 5413 2 TC =25˚C IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.1 30 1010.3 3 0.01 0.03 0.1 0.3 IC /IB=20 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 30 1010.3 3 0.01 0.03 0.1 0.3 IC /IB=20 25˚C –25˚C TC =100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.1 30 1010.3 3 100 300 1000 VCE =10V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 05 413 2 0.01 0.03 0.1 0.3 100 Pulsed tw =1ms Duty cycle=1% I C /IB=30 (IB1=–IB2) VCC =20V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC t=10ms 1msDC 2SD2466 2SD2466A Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SD2466, 2SD2466A R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) Without heat sink (2) With a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)