2SD2465 PANASONIC

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2SD2465, 2SD2465A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1603 n Features l Low collector to emitter saturation voltage VCE(sat) l High-speed switching l Full-pack package superior in insulation, which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 150 –55 to +150 Unit V V V A A W 2SD2465 2SD2465A 2SD2465 2SD2465A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 40V , IE = 0 V CB = 50V , IE = 0 V EB = 5V , IC = 0 IC = 10mA, IB = 0 V CE = 2V , IC = 0.1A V CE = 2V , IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A V CE = 5V , IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, V CC = 20V min typ 120 0.2 0.5 0.1 max 260 0.5 1.5 Unit mA mA V V V MHz ms ms ms 2SD2465 2SD2465A 2SD2465 2SD2465A *hFE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 Unit: mm 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package 9.9–0.3 231 4.6–0.2 2.9–0.2 2.6–0.1 2.54–0.2 0.75–0.1 1.2–0.15 5.08–0.4 15.0–0.313.7 +0.5 –0.2 f3.2–0.1 3.0–0.2 8.0–0.24.1–0.2 Solder Dip 1.45–0.15 0.7–0.1

Power Transistors 2SD2465, 2SD2465A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 150 12510025 75 50 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =2.0W)(1) (2) (3) (4) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 IB=60mA 50mA 40mA 30mA 20mA 10mA 5mA TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=10 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 VCE =2V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =5V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 08 26 4715 3 0.01 0.1 0.03 0.3 Pulsed tw =1ms Duty cycle=1% I C /IB=10 (IB1=–IB2) VCC =20V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC 10ms DC t=1ms2SD2465 2SD2465A Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SD2465, 2SD2465A R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 102 (1) Without heat sink (2) With a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)