2SD2459 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For low-frequency output amplification n Features l High collector to emitter voltage VCEO . l Low collector to emitter saturation voltage VCE(sat). l Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 150 150 1.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = 75V , IE = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 2V , IC = 100mA V CE = 2V , IC = 500mA IC = 500mA, IB = 25mA*2 IC = 500mA, IB = 25mA*2 V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min 150 150 120 typ 0.11 0.8 max 0.1 340 0.3 1.2 Unit mA V V V V V MHz pF * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol :2E *2 Pulse measurement *1hFE1 Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 Marking Symbol 2ER 2ES

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 1200 1000 800 600 400 200 Ta=25˚C IB=8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3

10 IC /IB=20

25˚C –25˚C Ta=100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=20

Ta=–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 500 400 300 200 100 VCE =2V Ta=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 200 160 120 Ta=25˚C VCB =10V Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 Ta=25˚C f=1MHz I E=0 Collector to base voltage VCB (V) Collector output capacitance Cob (pF)