2SD2457_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD2457 ■ Features

  • High collector to emitter voltage VCEO.
  • Large collector power dissipation PC.
  • Complementary to 2SB1599 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 40 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1.5 Collector Current - Pulse ICP 3 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 1 mA， IE= 0 50 Collector- emitter breakdown voltage VCEO Ic= 2 mA， IB= 0 40 Emitter - base breakdown voltage VEBO IE= 1 mA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 1 Collector-emitter cut-off current ICEO VCE= 40 V , IB= 0 10 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1.5 A, IB=150mA 1 Base - emitter saturation voltage VBE(sat) IC=2 A, IB=200mA 1.5 DC current gain hFE VCE= 5V, IC= 1 A 80 220 Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 45 pF Transition frequency fT VCE=5V,IE=-500mA,f=200MHz 150 MHz V uA V ■ Classification of hfe Type 2SD2457-Q 2SD2457-R Range 80-160 120-220 Marking 1YQ 1YR

www.kexin.com.cn2 Transistors NPN Transistors 2SD2457 ■ Typical Characterisitics PC IaT — C — VCE VCE(sat) — I C VBE(sat) — I C hFE — I C fT — I E Cob — VCB 0610 40 12080 14020 10060 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W) 010 82 64 4.0 3.0 1.0 2.5 3.5 2.0 0.5 1.5 Ta=25˚C IB=40mA 5mA 10mA 15mA 20mA 25mA 30mA 35mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3

10 IC/IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC/IB=10

Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 300 250 200 150 100 VCE=5V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 240 200 160 120 VCB=5V Ta=25˚C Emitter current IE (A) Transition frequency fT (MHz) 1 3 10 30 100 120 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)