2SD2457 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Silicon NPN epitaxial planer type For low-frequency power amplification n Features l High collector to emitter voltage VCEO . l Large collector power dissipation PC . l Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 1.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO ICEO IEBO V CBO V CEO hFE *1 V CE(sat) V BE(sat) fT C ob Conditions V CB = 20V , IE = 0 V CE = 10V , IB = 0 V EB = 5V , IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 V CE = 5V , IC = 1A*2 IC = 1.5A, IB = 0.15A*2 IC = 2A, IB = 0.2A*2 V CB = 5V , IE = –0.5A*2, f = 200MHz V CB = 20V , IE = 0, f = 1MHz min typ 120 150 max 100 220 1.5 Unit mA mA mA V V V V MHz pF * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol :1Y *2 Pulse measurement *1hFE Rank classification Rank Q R hFE 80 ~ 160 120 ~ 220
PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 4.0 3.0 1.0 2.5 3.5 2.0 0.5 1.5 Ta=25˚C IB=40mA 5mA 10mA 15mA 20mA 25mA 30mA 35mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3
10 IC /IB=10
Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3
100 IC /IB=10
Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 300 250 200 150 100 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 240 200 160 120 VCB =5V Ta=25˚C Emitter current IE (A) Transition frequency fT (MHz ) 1 3 10 30 100 120 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)