2SD2420 PANASONIC

Document overview

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Technical content

Silicon NPN triple diffusion planer type Darlington For power amplification I Features

  • High forward current transfer ratio h FE: 2 000 to 10 000
  • Dielectric breakdown voltage of the package: > 5 kV I Absolute Maximum Ratings TC = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO 60 V Collector to emitter voltage V CEO 60 V Emitter to base voltage V EBO 5V Peak collector current I CP 8A Collector current I C 4 A Collector power TC = 25°CP C 40 W dissipation Ta = 25°C 2.0 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 60 V, IE = 0 200 µA ICEO VCE = 30 V, IB = 0 500 µA Emitter cutoff current I EBO VEB = 5 V, IC = 02 m A Collector to emitter voltage V CEO IC = 30 mA, IB = 06 0V Forward current transfer ratio h FE1 VCE = 3 V, IC = 0.5 A 1 000 hFE2 * VCE = 3 V, IC = 3 A 2 000 10 000 Base to emitter voltage (DC value) V BE VCE = 3 V, IC = 3 A 2.5 V Collector to emitter saturation voltage V CE(sat)1 IC = 3 A, IB = 12 mA 2.0 V VCE(sat)2 IC = 5 A, IB = 20 mA 4.0 V Transition frequency f T VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time t on IC = 3 A, IB1 = 12 mA, IB2 = −12 mA 0.5 µs Storage time t stg VCC = 50 V 4.0 µs Fall time t f 1.0 µs 1.4±0.2 1.6±0.2 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 123 2.6±0.1 2.9±0.2 4.6±0.2 φ 3.2±0.1 3.0±0.5 9.9±0.3 15.0±0.513.7±0.2 4.2±0.2 Solder Dip 1: Base 2: Collector 3: Emitter Internal Connection B C E Note) *: Rank classification Rank P Q hFE2 4 000 to 10 000 2 000 to 5 000