2SD2416

2SD2416 PANASONIC

Document overview

• Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planer type darlington For low-frequency amplification n Features l High foward current transfer ratio hFE . l 60V zener diode built in between collector and base. l Darlington connection. l Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 60–10 60–10 1.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Symbol I CBO IEBO V CBO V CEO hFE V CE(sat) V BE(sat) fT Conditions V CB = 25V , IE = 0 V EB = 4V , IC = 0 IC = 100mA, IE = 0 IC = 1mA, IB = 0 V CE = 10V , IC = 1.0A* IC = 1.0A, IB = 1.0mA* IC = 1.0A, IB = 1.0mA* V CB = 10V , IE = –50mA, f = 200MHz min 6500 typ 150 max 40000 1.8 2.2 Unit mA mA V V V V MHz *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Internal Connection B C E Marking symbol :1T +25 +25

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC C ob — V CB 0 160 40 120 80 14020 100 60 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 2.4 2.0 1.6 1.2 0.8 0.4 50mA 60mA 70mA VCE =10V Ta=25˚C IB=100mA 40mA 30mA 80mA 90mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 10.03 0.3 3 0.1 0.3 100 300

1000 IC /IB=1000

25˚C –25˚C Ta=100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 Ta=–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 102 103 104 105 106 VCE =10V Ta=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)