2SD2414 TOSHIBA

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2SD2414(SM) 2003-02-04 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications /Gb7/G20Low collector saturation voltage: V CE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 100 V Collector-emitter voltage V CEO 80 V Emitter-base voltage V EBO 5 V Collector current I C 7 A Base current I B 1 A Ta = 25°C 1.5 Collector power dissipation Tc = 25°C PC W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10S2 Weight: 1.4 g (typ.)

2SD2414(SM) 2003-02-04 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = 100 V, IE = 0 ― ― 5 µA Emitter cut-off current I EBO V EB = 5 V, IC = 0 ― ― 5 µA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 80 ― ― V hFE (1) V CE = 1 V, IC = 1 A 100 ― 320 DC current gain hFE (2) V CE = 1 V, IC = 4 A 30 ― ― Collector-emitter saturation voltage V CE (sat) IC = 4 A, IB = 0.4 A ― 0.25 0.5 V Base-emitter saturation voltage V BE (sat) I C = 4 A, IB = 0.4 A ― 0.9 1.4 V Transition frequency f T V CE = 4 V, IC = 1 A ― 10 ― MHz Collector output capacitance C ob V CB = 10 V, IE = 0, f = 1 MHz ― 200 ― pF Turn-on time t on ― 0.4 ― Storage time t stg ― 2.5 ― Switching time Fall time t f IB1 = −IB2 = 0.3 A, duty cycle ≤ 1% ― 0.5 ― µs/G20 Marking Explanation of Lot No. IB1 20 µs VCC ≈ 30 V Output 10 Ω IB2 IB1InputIB2 Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture) D2414 Product No. Lot No.

2SD2414(SM) 2003-02-04 3 Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector current I C (A) VCE – IC Collector-emitter voltage V CE (V) Collector current I C (A) VCE – IC Collector-emitter voltage V CE (V) Collector current I C (A) Collector-emitter voltage V CE (V) Collector current I C (A) hFE – IC DC current gain h FE Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) VCE – IC 1.2 0.8 0.6 0.4 0.2 1 2 3 4 5 6 Common emitter Tc = 25°C IB = 30 mA 1.0 10060 500 600 700 150 200 300 400 0.02 0.02 Tc = 100°C 0.1 0.3 1 0.3 0.5 Common emitter IC/IB = 10 −55 0.05 0.1 3 10 Common emitter VCE = 1 V 0.1 0.03 0.3 1 3 500 300 Tc = 100°C 100 −55 1.2 0.8 0.6 0.4 0.2 1 2 3 4 5 6 Common emitter Tc = 100°C IB = 20 mA 1.0 100 200 300 400 500 600 700 1.2 0.8 0.6 0.4 0.2 1 2 3 4 5 6 Common emitter Tc = −55°C IB = 30 mA 1.0 60 100 150 200 300 400 500 600 700 Common emitter Tc = 25°C IB = 10 mA 2 4 6 8 10 160 100 80

2SD2414(SM) 2003-02-04 4 Base-emitter voltage V BE (V) IC – VBE Collector current I C (A) Collector current I C (A) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) 0.1 0.02 0.3 1 3 Tc = −55°C Common emitter IC/IB = 10 100 0.1 0.5 0.3 Common emitter VCE = 1 V Tc = 100°C −55 0.1 5 30 50 100 0.3 0.5 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max DC operation Tc = 25°C 1 ms* 10 ms* 100 ms*

2SD2414(SM) 2003-02-04 5 /Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE