2SD2391_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD2391 ■ Features

  • Low saturation voltage
  • Collector-emitter voltage =60V
  • Pc = 2W (on 40X40X0.7mm ceramic board).
  • Complements the 2SB1561. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse (Note.1) ICP 6 0.5 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Collector Power Dissipation PC W (Note.2) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 60 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 100 Emitter cut-off current IEBO VEB= 5V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50mA 0.35 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=50mA 1.2 hFE(1) VCE= 2V, IC= 500mA 82 390 hFE(2) VCE= 2V, IC= 1.5A 45 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 21 pF Transition frequency fT VCE= 2V, IE= -500mA,f=100MHz 210 MHz DC current gain V V nA ■ Classification of hfe(1) Type 2SD2391-P 2SD2391-Q 2SD2391-R Range 82-180 120-270 180-390 Marking DTP* DTQ* DTR*

www.kexin.com.cn2 Transistors NPN Transistors 2SD2391 ■ Typical Characterisitics Fig.1 Grounded emitter output characteristics 540 2 31 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 2.0 0.0 0.4 0.8 1.2 1.6 COLLECTOR CURRENT : lC (A) Ta=25°C 20mA 16mA18mA IB=0mA 2mA 4mA 6mA 8mA 10mA 12mA 14mA Fig.2 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) 500m 200m 100m 50m 20m 10m VCE=2V Ta =100 25° C -40 Fig.3 DC current gain vs. collector current ( 1 ) 10m 20m 50m 100m 200m 500m 1 2 5 10 100 200 1000 500 COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE Ta=100°C -40°C 25°C VCE=2V Fig.4 DC current gain vs. collector current ( 2 ) 10m 20m 50m 100m 200m 500m 1051 2 100 200 1000 500 COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE VCE=5V Ta=25°C Fig.5 Collector-emitter saturation voltage vs. collector current ( 1 ) 5m 10m 20m 50m 100m 200m 500m 51 2 100 200 1000 500 COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) IC/IB=20 Ta=100°C 25°C -40°C Fig.6 Collector-emitter saturation voltage vs. collector current ( 2 ) 5m 10m 20m 50m100m 200m 500m 51 2 100 200 1000 500 COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Ta=25°C IC/IB=50 Fig.7 Gain bandwidth product vs. emitter current -2m -10m -100m -1 -2 100 200 1000 500 EMITTER CURRENT : IE (A) TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE=2V Fig.8 Iutput capacitance vs. voltage 0.1 0.2 0.5 1 2 5 10 20 50 100 100 200 1000 500 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IE=0A IC=0ACib Cob Fig.9 Safe operating area 0.2 10.5 2 5 10 20 50 100 200 500 10m 20m 50m 100m 200m 500m COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : lC (A) DC Ta=25°C Single pulse P W =1ms PW=100ms Pw =10ms Ic max(Pulse)