2SD2375 PANASONIC

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio n Features l High forward current transfer ratio hFE which has satisfactory linearity l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC IB PC Tj Tstg Ratings 150 –55 to +150 Unit V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Symbol ICBO ICEO IEBO V CEO hFE * V CE(sat) fT Conditions V CB = 80V , IE = 0 V CE = 40V , IB = 0 V EB = 6V , IC = 0 IC = 25mA, IB = 0 V CE = 4V , IC = 0.5A IC = 2A, IB = 0.05A V CE = 12V , IC = 0.2A, f = 10MHz min 500 typ max 100 100 100 1500 Unit mA mA mA V V MHz *hFE Rank classification Rank Q P hFE 500 to 1000 800 to 1500 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package 9.9–0.3 15.0–0.513.7–0.2 4.2–0.2 4.6–0.2 2.9–0.2 0.8–0.1 1.4–0.2 f3.2–0.1 2.6–0.1 0.55–0.15 2.54–0.3 5.08–0.5 3.0–0.5 1.6–0.2 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.

PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =2W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 1.0 0.8 0.6 0.4 0.2 TC =25˚CIB=1.0mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA 0.9mA Collector to emitter voltage VCE (V) Collector current IC (A) VCE =5V TC =25˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=40 TC =25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =4V TC =25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =12V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC 10ms t=1ms DC Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) Without heat sink (2) With a 100 · 80 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)