2SD2357_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SD2357 ■ Features
- Low collector to emitter saturation voltage VCE(sat).
- Large collector power dissipation PC.
- Complementary to 2SB1537 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCEO 10 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse ICP 1.2 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100u A， IE= 0 10 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 10 Emitter - base breakdown voltage VEBO IE= 100u A， IC= 0 5 Collector-base cut-off current ICBO VCB= 7 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=5mA 0.15 Base - emitter saturation voltage VBE(sat) IC=500mA, IB=5mA 1.2 DC current gain hFE VCE= 2V, IC= 100mA 200 800 Collector output capacitance Cob VCB=5V, IE=0, f=1MHz 30 pF Transition frequency fT VCE=5V,IE=-50mA,f=200MHz 120 MHz V uA V ■ Marking Marking 1M
www.kexin.com.cn2 Transistors NPN Transistors 2SD2357 ■ Typical Characterisitics PC IaT — C — VCE IC — VBE VCE(sat) — I C hFE — I C fT — I E Cob — VCB 0610 40 12080 14020 10060 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W) 210 1082 64 1.2 1.0 0.8 0.6 0.4 0.2 Ta=25˚C 2.5mA 2.0mA 1.5mA 1.0mA 3.0mA IB=3.5mA Collector to emitter voltage VCE (V) Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 VCE=2V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3
10 IC/IB=100
25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 600 500 400 300 200 100 Ta=75˚C 25˚C –25˚C VCE=2V Collector current IC (A) Forward current transfer ratio hFE 240 200 160 120 VCB=5V f=200MHz Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) 1 3 10 30 100 120 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)