2SD2351 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Features
High DC current gain. High emitter-base voltage. (VCBO=12V) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 12 V
0.15 A(DC)
0.2 A(Pulse)*
Collector power dissipation P C 0.2 W Junction temperature Tj 150 Storage temperature T stg - 5 5t o+ 1 5 0 * Single pulse Pw=100ms. ICCollector current Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BV CBO IC=10ìA 60 V Collector-emitter breakdown voltage BV CEO IC=1mA 50 V Emitter-base breakdown voltage BV EBO IE=10ìA 12 V Collector cutoff current I CBO VCB=50V 0.3 ìA Emitter cutoff current I EBO VEB=12V 0.3 ìA Collector-emitter saturation voltage V CE(sat) IC/IB=50mA/5mA 0.3 V DC current transfer ratio h FE VCE/IC=5V/1mA 820 2700 Output capacitance f T VCE=5V, IE=-10mA, f=100MHz 250 MHz Transition frequency C ob VCB=5V, IE=0A, f=1MHz 3.5 pF hFE Classification Marking BJV BJW hFE 820 1800 1200 2700