2SD2345

2SD2345 PANASONIC

Document overview

• Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planer type For low-frequency amplification n Features l High foward current transfer ratio hFE . l Low collector to emitter saturation voltage VCE(sat). l High emitter to base voltage VEBO . l Low noise voltage NV . n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–75 3:Collector SS–Mini Type Package 1.6–0.15 1.6–0.1 1.0–0.10.75–0.15 0.45–0.1 0.50.3 0 to 0.1 0.5 0.8–0.1 0.40.4 0.2–0.1 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 100 125 125 –55 ~ +125 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Symbol ICBO ICEO V CBO V CEO V EBO hFE * V CE(sat) fT Conditions V CB = 20V , IE = 0 V CE = 20V , IB = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 2mA IC = 10mA, IB = 1mA V CB = 10V , IE = –2mA, f = 200MHz min 400 typ 0.05 120 max 100 2000 0.2 Unit nA mA V V V V MHz *hFE Rank classification Rank R S T hFE 400 ~ 800 600 ~ 1200 1000 ~ 2000 Marking symbol :1Z

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB NV — I C NV — V CE 0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 160 120 100 140 Ta=25˚C 20mA 30mA 40mA 50mA 60mA 70mA 80mA 90mA 10mA IB=100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 1800 1500 1200 900 600 300 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 250 200 150 100 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.03 0.1 0.3 1 100 VCE =10V G V=80dB Function=FLAT Ta=25˚C 5kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 1 3 10 30 100 100 IC =1mA G V=80dB Function=FLAT Ta=25˚C 5kW R g=100kW 22kW Collector to emitter voltage VCE (V) Noise voltage NV (mV )