2SD2266 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Silicon NPN triple diffusion planar type For power switching n Features l High-speed switching l Satisfactory linearity of foward current transfer ratio hFE l Allowing supply with the radial taping n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC IB PC Tj Tstg Ratings 150 –55 to +150 Unit V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 * hFE2 V BE V CE(sat) fT ton tstg tf Conditions V CB = 80V , IE = 0 V EB = 6V , IC = 0 IC = 25mA, IB = 0 V CE = 4V , IC = 1A V CE = 4V , IC = 4A V CE = 4V , IC = 4A IC = 4A, IB = 0.4A V CE = 12V , IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, V CC = 50V min typ 0.3 1.0 0.2 max 100 100 320 2.0 1.5 Unit mA mA V V V MHz ms ms ms *hFE1 Rank classification Rank Q P O hFE1 70 to 150 120 to 250 160 to 320 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter MT4 Type Package 1.010.0–0.2 0.55–0.1 2.5–0.2 2.5 –0.2 4.2–0.2 13.0–0.2 2.5–0.2 18.0–0.5 Solder Dip 5.0–0.1 2.25–0.2 1.2–0.1 0.65–0.1 0.55–0.1 C1.0 90° C1.0 123 1.05–0.10.35–0.1

PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =2.0W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 08 26 4715 3 IB=40mA TC =25˚C 35mA 30mA 25mA 20mA 15mA 10mA 5mA Collector to emitter voltage VCE (V) Collector current IC (A) 04 13 2 VCE =4V TC =–25˚C 25˚C 100˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 102 103 104 VCE =4V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 100 1000 VCE =12V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 10 100 10003 30 300 100 1000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 08 26 4715 3 0.01 0.1 100 Pulsed tw =1ms Duty cycle=1% I C /IB=10 (IB1=–IB2) VCC =50V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C t=1ms DC ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)

R th(t)—t 10–3 10210–2 110–1 10 10 3 104 0.1 100 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)