2SD2255 PANASONIC

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Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1493 n Features l Optimum for 60W HiFi output l High foward current transfer ratio hFE : 5000 to 30000 l Low collector to emitter saturation voltage VCE(sat): <2.5V n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 160 140 2.5 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO ICEO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 160V, IE = 0 V CE = 140V , IB = 0 V EB = 5V , IC = 0 IC = 30mA, IB = 0 V CE = 5V , IC = 1A V CE = 5V , IC = 6A IC = 6A, IB = 6mA IC = 6A, IB = 6mA V CE = 10V , IC = 0.5A, f = 1MHz IC = 6A, IB1 = 6mA, IB2 = –6mA, V CC = 50V min 140 2000 5000 typ 2.5 5.0 2.5 max 100 100 100 30000 2.5 3.0 Unit mA mA mA V V V MHz ms ms ms *hFE2 Rank classification Rank Q P hFE2 5000 to 15000 8000 to 30000 TC =25°C Ta=25°C Unit: mm Internal Connection 4.5–0.215.0–0.5 13.0–0.5 20.0–0.3 19.0–0.3 15.0–0.2Solder Dip 4.0 –0.1 4.0–0.1 12.5 3.5 16.2–0.5 10.5–0.5 10.9–0.5 5.45–0.3 1.1–0.1 f3.2–0.1 2.0–0.2 2.0–0.1 1.4–0.3 0.6–0.2 123 1:Base 2:Collector 3:Emitter EIAJ:SC–65(a) TOP–3 Package(a) B E C

PC —T a I C —V CE V BE(sat)—I C V CE(sat)—I C hFE —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 12 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =2.5W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚C IB=5mA 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.1 1 10 1000.3 3 30 0.1 100 0.3 IC /IB=1000 TC =–25˚C 100˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.1 1 10 1000.3 3 30 0.1 100 0.3 IC /IB=1000 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 30000 100000 VCE =5V 25˚C –25˚C TC =100˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 1000 100 300 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 01 6 41 2 8 0.01 0.03 0.1 0.3 100 Pulsed tw =1ms Duty cycle=1% I C /IB=1000 (IB1=–IB2) VCC =50V TC =25˚Ctstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C 10ms t=1ms DC ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)

R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.2A (2W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)