2SD2242 PANASONIC

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2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington For power amplification n Features l High foward current transfer ratio hFE l High-speed switching l Allowing supply with the radial taping n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 150 –55 to +150 Unit V V V A A W 2SD2242 2SD2242A 2SD2242 2SD2242A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO ICEO IEBO V CEO hFE1 hFE2 * V BE V CE(sat) fT ton tstg tf Conditions V CB = 60V , IE = 0 V CB = 80V , IE = 0 V CE = 30V , IB = 0 V CE = 40V , IB = 0 V EB = 5V , IC = 0 IC = 30mA, IB = 0 V CE = 3V , IC = 0.5A V CE = 3V , IC = 3A V CE = 3V , IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA V CE = 10V , IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, V CC = 50V min 1000 2000 typ 0.5 max 200 200 500 500 10000 2.5 Unit mA mA mA V V V MHz ms ms ms 2SD2242 2SD2242A 2SD2242 2SD2242A 2SD2242 2SD2242A *hFE2 Rank classification Rank Q P hFE2 2000 to 50004000 to 10000 Unit: mm Internal Connection 1:Base 2:Collector 3:Emitter MT4 Type Package 1.010.0–0.2 0.55–0.1 2.5–0.2 2.5 –0.2 4.2–0.2 13.0–0.2 2.5–0.2 18.0–0.5 Solder Dip 5.0–0.1 2.25–0.2 1.2–0.1 0.65–0.1 0.55–0.1 C1.0 90° C1.0 123 1.05–0.10.35–0.1 B E C

Power Transistors 2SD2242, 2SD2242A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C C ob —V CB Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =2.0W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 IB=4.0mA TC =25˚C 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA Collector to emitter voltage VCE (V) Collector current IC (A) 03 . 2 0.8 2.4 1.6 VCE =3V TC =100˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=250 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 102 103 104 105 VCE =3V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C 10ms t=1ms DC 2SD2242 2SD2242A ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) 10–3 10210–2 110–1 10 10 3 104 0.1 100 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)