2SD2225 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1473 n Features l High collector to emitter voltage VCEO of 120V . l Optimum for low-frequency driver amplification. l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 120 120 0.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol V CEO V EBO hFE1 *1 hFE2 hFE3 V CE(sat) V BE(sat) fT C ob Conditions IC = 0.1mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 150mA*2 V CE = 5V , IC = 500mA*2 V CE = 5V , IC = 100mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 V CB = 10V , IE = –50mA, f = 200MHz*2 V CB = 10V , IE = 0, f = 1MHz min 120 100 typ 0.15 0.9 200 11.5 max 330 1.2 Unit V V V V MHz pF *1hFE1 Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 200 160 120 Ta=25˚C 0.2mA 0.1mA 0.3mA 0.4mA 0.5mA 0.6mA 0.7mA 0.8mA 0.9mA IB=1.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 600 500 400 300 200 100 Ta=75˚C 25˚C –25˚C IC /IB=10 Collector current IC (A) Forward current transfer ratio hFE 400 300 100 250 350 200 150 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)