2SB1472 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
+ Suitable for sets whose height is restricted + High DC current gain + Large current capacity and wide ASO (| ):28B1472 Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vocso (-)70 Vv Collector to Emitter Voltage Vcgo (-)60 v Emitter to Base Voltage VEBO (-)6 Vv Collector Current Ig (-)7 A Peak Collector Current icp (-)l0 OA Collector Dissipation Po 1.65 WwW Tce=25°C 35 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C. min typ max unit Collector Cutoff Current Ico Vop=(-)40V Ig=0 (-)0.1 mA Emitter Cutoff Current Igpo Vep=(—)5V,I¢=0 (-)3.0 mA DC Current Gain hrs Voe=(—)2V,Ico=(-)3.5A 2000 5000 Gain-Bandwidth Product fr Vor=(—)5V,Io=(-)3.5A 20 MHz C-E Saturation Voltage Vex(at) Ic=(—)3.5A,Igp=(—)TmA 0.9(-)15 V (-1.0) v B-E Saturation Voltage VaE(at) Io=(-)3.5A,[g=(—-)7mA (-)20° V C-B Breakdown Voltage Varco Io=(—-)5mAIg=0 (-)70 Vv C-E Breakdown Voltage Vesryczo Ic=(—)50mA,Rgg= © (~)60 v Continued on the next page. Electrical Connection Package Dimensions 2049B (unit: mm) 09 8.8 11.0 27 ra ra ce cg prt in sy Bo Sah Bo cn g| Ey | B Race leet err i 94 E; Emitter & Ee 4 €: Collector 2881472 2802224 B: Base Unit (resistance: 2) SANYO: TO-220MF SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN N120MH,JK(KOTO) No.3366-1/4
Continued from the preceding page. ' min yp max unit Turn-ON time ton See specified Test Circuit. (0.5)0.6 HS Storage Time tstg Same as above. (1.5)3.0 “S Fall Time te Same as above. (1.4)1.7 “Ss Switching Time Test Circuit (For PNP, the polarity is reversed.) 5001e1=—500le2—lo= 3A OUTPUT ts 9 eur” Re TT — “ | 2 on RL Pw=50us 1 DCS 1% 50 4 mu 100% 470 } 8 é Vee=—5SV Voo=20V Unit (resistance: , capacitance: F) ~19 Ic — Voce 0 Ic - Voce _ [Pp yt yy ere [ escent | Bere ty Fomtioint | 11) tbe a nol Fi | a|From the tpg An Ce aze= Yeo 3.6 agra | | gee an YA Sti Znaa ae ee ee Con aD Zee eee ee ane sathiT TTT tt) os fT = ° A |_| EAE EERE A Collector to Emitter Voltage,Vcx ~ V. Collector to Emitter Voltage,Vcg — V “5 Ic — Vce 8 Ic = Voce | | fy tf yp aera LT Eft Ly eee SEER «EPEAT eCottbrceg LooeT T TT T 3 eas 2 ie a= — PL eee en | is} 350A M 2 | Bee Gee a ee 5 Za eee ee a ep ree Sab | feel 8 fe ee Piper rr Ty PSE anf i ns ee Collector to Emitter Voltage, Vox — V Collectorte Emitter Voltage,Vop'- V SS : No.3366-2/4
COCOA < PEE HA
4 LTT Try Pit tT TTT TPA
soccer ie | PLOT ELE Ts SHAR PO eo ee / an Coo VOC Ley PT Po eC HY Base toEmitter Voltage,Vpp-V Base to Emitter Voltage,Van-V 2 here — Io 2 hre — Ic HESS | IOs Hi A pee eR sles NT : Se TN g i a a 117] at ft tt NS ae Ne 2 ee E Ft t+} SH & J] | 7” eee é Caan Poi a i a ei Try s Peer ad. | PP a owt Jit Ty tt yr a Collector Carrentilg — A ” ” Collector Current,Jg — A ° “ToT oT 2881472 2802224 7 or nf Hee Ble it tit di) aff ey velit TCU) kk Bt UT EAA ee as y as
33 Doe soe ee
-O1 1.0 -”0 On 1.0 10 Collector Current,Ig — A Collector Current,I¢ — A 10 ore -Ic om - Ice Lt Tas > = > = fl Hee SE) ae fit UT ity HT ET = 3 e 3 tp it iit PT) Litt pt ag : ee | as Ll Sr eee ee aa lt TT TTT Terr) #8 ep ryty Po Pe
7 Collector Current ~ A * Collectir Carrentjg = A °
. No.3366-3/4
2 ASO 2 ASO
74 pie itt ° [te [fff fae | S S < SSeS ee < ee SRS ae oe SN TT 1 LT AS) we 1 g . 2 2¢ > iT aN a 2 1— 3x jt Tt Zoop | | 1 Tent yt gf PPPS TT 5 [4 t St a o § — 9, aN | a a gs it TTT PSS NT 2 eS ONS Ee 37 1 Tr *, SH
2 Ni =
Te=250 rt fit = {| 37 1ms to 100ms: Single pulse LH 3f-Ams to 100ms: Single pulse HE 2 g! a ee 2 a -10 100 10 | 00 Collector to Emitter Voltage,Vcg — V Collector to Emitter Voltage, Vcg — V “, Po - Ta 2.0 Po — Ta CT eee) ee 35} 1.65) Tae tN ee a] PNET og \\GRREE E By § is 3 “i § 1.2 Ay a, ||] Sst TI 3 A & w Ceey = Ne, ay | | | & TT) 3 Ais Ne, Bos Ie git Pp oo NT TT 3 sj | fit} N\\P oe NS TERE EES Pt | | . | f) IN ol IN 0 0 0 50 w oo u a0 bo 0 20 40 60 80 100120 140160 Ambient Temperature,Ta — °C Ambient Temperature,Ta ~ °C MINo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. B Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, joiftly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affifates, subsidiaries and distributors or any of their officers and employees jointly or severally. i Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of y gl third parties. eee No.3366-4/4