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Silicon NPN triple diffusion planar type Darlington For low-frequency amplification n Features l Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio h FE l A shunt resistor is omitted from the driver l Allowing supply with the radial taping n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC =25°C) Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 100 1.5 1.5 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Symbol I CBO IEBO V CBO V CEO V EBO hFE * V CE(sat) V BE(sat) fT Conditions V CB = 25V , IE = 0 V EB = 4V , IC = 0 IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 V CE = 10V , IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA V CB = 10V , IE = –50mA, f = 200MHz min 100 4000 typ 150 max 100 100 20000 1.8 2.2 Unit nA nA V V V V V MHz *hFE Rank classification Rank Q R hFE 4000 to 10000 8000 to 20000 Unit: mm Internal Connection 1:Emitter 2:Collector 3:Base MT3 Type Package 7.5–0.2 4.5 –0.2 90° 0.8C0.8C 0.4–0.1 0.8C 123 0.5–0.1 0.7–0.1 1.0–0.1 0.85–0.10.65–0.1 0.7–0.1 2.5–0.1 10.8–0.216.0–1.0 3.8–0.2 B E C
PC —T a V CE(sat)—I C V BE(sat)—I C hFE —I C C ob —V CB 0 160 40 120 80 14020 100 60 2.0 1.6 1.2 0.8 0.4 Without heat sink Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=1000 TC =–25˚C 25˚C 100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=1000 25˚C 100˚C TC =–25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 3 10.10.03 0.3 100 300 1000 3000 10000 30000 100000 TC =100˚C 25˚C –25˚C VCE =10V Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)