2SD2216

2SD2216 PANASONIC

Document overview

• Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 n Features l High foward current transfer ratio hFE . l Low collector to emitter saturation voltage VCE(sat). l SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–75 3:Collector SS–Mini Type Package 1.6–0.15 1.6–0.1 1.0–0.10.75–0.15 0.45–0.1 0.50.3 0 to 0.1 0.5 0.8–0.1 0.40.4 0.2–0.1Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 200 100 125 125 –55 ~ +125 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO V CBO V CEO V EBO hFE1 * hFE2 V CE(sat) fT C ob Conditions V CB = 20V , IE = 0 V CE = 10V , IB = 0 IC = 10mA, IE = 0 IC = 100mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 2mA V CE = 2V , IC = 100mA IC = 100mA, IB = 10mA V CB = 10V , IE = –2mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min 160 typ 0.1 150 3.5 max 0.1 100 460 0.3 Unit mA mA V V V V MHz pF Marking symbol :Y *hFE1 Rank classification Rank Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 Marking Symbol YQ YR YS

PC — Ta I C — V CE IB — V BE IC — V BE IC — IB V CE(sat) — IC hFE — IC fT — IE 0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 0 826 4 Ta=25˚C IB=160mA 40mA 20mA 60mA 80mA 140mA 120mA 100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 1200 1000 800 600 400 200 VCE =10V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (mA) 240 200 160 120 VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0 1000 800200 600400 240 200 160 120 VCE =10V Ta=25˚C Base current IB (mA) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 300 240 120 180 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz )