2SD2215 PANASONIC

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2SD2215, 2SD2215A Silicon NPN triple diffusion planar type For power amplification n Features l High collector to base voltage VCBO l I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 350 400 250 300 1.5 0.75 1.3 150 –55 to +150 Unit V V V A A W 2SD2215 2SD2215A 2SD2215 2SD2215A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CES ICEO IEBO V CEO hFE1 * hFE2 V BE V CE(sat) fT ton tstg tf Conditions V CE = 350V , VBE = 0 V CE = 400V , VBE = 0 V CE = 150V , IB = 0 V CE = 200V , IB = 0 V EB = 5V , IC = 0 IC = 30mA, IB = 0 V CE = 10V , IC = 0.3A V CE = 10V , IC = 1A V CE = 10V , IC = 1A IC = 1A, IB = 0.2A V CE = 5V , IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, V CC = 50V min 250 300 typ 0.5 0.5 max 250 1.5 Unit mA mA mA V V V MHz ms ms ms 2SD2215 2SD2215A 2SD2215 2SD2215A 2SD2215 2SD2215A *hFE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 1:Base 2:Collector 3:Emitter I Type Package (Y) 7.2–0.3 7.0–0.3 3.0–0.2 3.5–0.2 10.0 +0.3 –0. 0.8–0.21.0–0.2 4.6–0.4 213 1.1–0.1 0.75–0.1 2.3–0.2 0.85–0.1 0.4–0.1 7.0–0.3 0.75–0.1 2.3–0.2 4.6–0.4 1.1–0.1 10.2–0.3 7.2–0.3 2.0–0.2 0.9–0.1 3.5–0.2 2.5–0.2 1.01.0 2.5–0.2 3.0–0.2 1.0 max. 123 0 to 0.15 0 to 0.15 2.5 0.5 max.

Power Transistors 2SD2215, 2SD2215A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =1.3W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 1.2 1.0 0.8 0.6 0.4 0.2 IB=14mA 12mA 10mA 2mA 4mA 6mA 8mA TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 4.0 3.2 2.4 1.6 0.8 TC =100˚C 25˚C –25˚C VCE =10V Base to emitter voltage VBE (V) Collector current IC (A) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =10V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 0.3 100 300 1000 VCE =10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3 10ms t=1ms DC 2SD2215 2SD2215A ICP IC Non repetitive pulse TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 10–3 10210–2 110–1 10 10 3 104 0.1 100 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)