2SD2211 KEXIN
Document overview
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Technical content
Features
High breakdown voltage.(BVCEO =1 6 0 V ) Low collector output capacitance. (Typ. 20pF at VCB =1 0 V ) High transition frequency.(fT =8 0 M H Z ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage V CBO 160 V Collector to emitter voltage V CEO 160 V E m i t t e rt ob a s ev o l t a g e V EBO 5V Collector current I C 1.5 A(DC) Collector current I C 3 A(Pulse)*1 0.5 W 2*2 W Junction temperature T j 150 Storage temperature T stg - 5 5t o1 5 0 *1 Pw=200msec duty=1/2 *2 When mounted on a 40 X 40 X 0.7mm ceramic board. PCCollector power dissipation
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V (BR)CBO IC = 50ìA 160 V Collector to emitter breakdown voltage V (BR)CEO IC = 1mA 160 V Emitter to base breakdown voltage V (BR)EBO IE = 50ìA 5 V Collector cutoff current I CBO VCB = 120V 1 ìA Emitter cutoff current I EBO VEB =4 V 1 ì A Collector-emitter saturation voltage V CE(sat) IC/IB = 1A/0.1A 2 V Base-emitter saturation voltage V BE(sat) IC/IB = 1A/0.1A 1.5 V DC current transfer ratio h FE VCE/IC = 5V/0.1A 120 390 Transition frequency f T VCE =5 V,I E = -0.1A , f = 30MHz 80 MHz Output capacitance C ob VCB = 10V , IE = 0A , f = 1MHz 20 pF hFE Classification Marking DQQ DQR Rank Q R hFE 120 270 180 390 2SD2211