2SB1450 SANYO

Document overview

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Technical content

Features

  • Surface mount type device making the following possible -Reduction in the number of manufacturing processes for 25B1450/2SD2199-applied equipment -High density surface mount applications -Small size of 25B1450/2SD2199-applied equipment - Low collector-to-emitter saturation voltage - Highly resistant to breakdown because of wide ASO ( ): 28B1450 Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Vcso (—)60 v Collector-to-Emitter Voltage Voro (-)50 Vv Emitter-to-Base Voltage VEBO (-)6 v Collector Current Ic (-)7 A Collector Current(Pulse) Yop (—)12 A Collector Dissipation Po 1.65 WwW Te= 25°C 40 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta = 25°C min typ max unit Collector CutoffCurrent — Icpo Vop=(—)40V,In=0 (-)0.1 mA Emitter Cutoff Current Igpo Vrp=(—)4V,Io=0 (-)0.1 mA DC Current Gain hpe(1) Vor=(—)2V,Io=(—)IA 10% 280% bpp (2) Vor=(—)2V,I¢=(—)5A 30 Gain-Bandwidth Product fp Vor=(-)5V,Ig=(—)1A 10 MHz C-E Saturation Voltage Vexisat) Io=(—)4A,Ip=(—)0.4A (-)0.4 Vv C-B Breakdown Voltage Visrycso =. Ig =(—)1mA, Ip =0 (-)60 v C-E Breakdown Voltage Visrceo Ic=(—)1mA,Rgp= © (—)50 Vv E-B Breakdown Voltage Vereso Ip=(—)1mA,Ic=0 (—)6 v Turn-ON Time ton See specified Test Circuit. 0.2 ps Storage Time tstg + (0.1)0.3 ps Fall Time te ia (0.7)0.9 ys % : The 25B1450/2SD2199 are classified by 1A hpg as follows:. Switching Time Test Circuit (unit : mm) | . habs BL output Inpt of 10 hy. | 4 th Te Vee = 5V Vocs20V o.8t TL aiLee 101g) =~ Wipz= Ic =2A For PNP, the polarity is reversed. 1: Base 2: Collector Unit (Resistance : 2, Capacitance : F) rena 3: Emitter 2. SANYO: SMP-FD SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 7039MO,TS No.3150-1/3

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oo ae Se a: an «or Ambient Temperature,Ta — °C Case Temperature, Tc - °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Mi Anyone purchasing any products described or contained herein for an above-mentioned use shalt ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: © Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation .on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of . their officers and employees jointly or severally. ME Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual Property rights or other rights of third parties. eee No.3150-3/3