2SD2198 KEXIN
Document overview
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Technical content
Features
Surface mount type device making the following possible. Low collector-to-emitter saturation voltage. 1:B a s e 2 : Collector 3 : Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 6V Collector current I C 5A Collector current (pulse) I CP 9A Collector dissipation 1.65 W TC =2 5 30 W Jumction temperature T j 150 Storage temperature T stg -55 to +150 PC
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current Ic BO VCB = 40V , IE =0 0 . 1 m A Emitter cutoff current I EBO VEB =4 V,I C =0 0 . 1 m A VCE =2 V,I C = 1A 70 280 VCE =2 V,I C =3 A 3 0 Gain bandwidth product f T VCE =5 V,I C =1 A 3 0 M H z Output capacitance C ob VCB = 10V , f = 1MHz 100 pF Collector-emitter saturation voltage V CE(sat) IC =3 A,I B = 0.3A 0.4 V Collector-to-base breakdown voltage V (BR)CBO IC =1 m A,IE =0 6 0 V Collector-to-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 50 V Emitter-base breakdown voltage V (BR)EBO IE =1 m A,IC =0 6 V Turn-on time t on 0.1 ìs Storage time t stg 1.4 ìs Fall time t f 0.2 ìs DC current Gain h FE hFE Classification Rank Q R S hFE 70 140 100 200 140 280 2SD2198