2SD2185 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 n Features l Low collector to emitter saturation voltage VCE(sat). l Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = 20V , IE = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 2V , IC = 200mA V CE = 2V , IC = 1.0A IC = 1A, IB = 50mA IC = 1A, IB = 50mA V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHZ min 120 typ 0.15 0.82 110 max 0.1 340 0.3 1.2 Unit mA V V V V V MHz pF Marking symbol :1H *1hFE1 Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 Marking Symbol 1HR 1HS * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *2 Pulse measurement
PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 120 100 Ta=25˚C 50mA 350mA 300mA 250mA 200mA 150mA 100mA IB=400mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3 Ta=75˚C 25˚C –25˚C IC /IB=50 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3
100 IC /IB=50
Ta=–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 300 250 200 150 100 VCE =2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 240 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)