2SD2184 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 n Features l High collector to emitter voltage VCEO . l Low collector to emitter saturation voltage VCE(sat). l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 150 150 1.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = 75V , IE = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 2V , IC = 100mA V CE = 2V , IC = 500mA IC = 500mA, IB = 25mA*2 IC = 500mA, IB = 25mA*2 V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min 150 150 120 typ 0.11 0.8 max 0.1 340 0.3 1.2 Unit mA V V V V V MHz pF *1hFE1 Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) *1 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *2 Pulse measurement

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 01 2 10826 4 1200 1000 800 600 400 200 Ta=25˚C IB=8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3

10 IC /IB=20

Ta=100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=20

Ta=–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 500 400 300 200 100 VCE =2V Ta=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 200 160 120 Ta=25˚C VCB =10V Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 Ta=25˚C f=1MHz I E=0 Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 200 16040 120 80 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W )