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1Publication date: May 2003 SJD00251BED 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification ■ Features
- Low collector-emitter saturation voltage VCE(sat)
- Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) V CEO IC = 1 mA, IB = 0 50 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Forward current transfer ratio h FE1 * VCE = 2 V, IC = 200 mA 120 340 hFE2 VCE = 2 V, IC = 1 A 80 Collector-emitter saturation voltage V CE(sat) IC = 1 A, IB = 50 mA 0.15 0.30 V Base-emitter saturation voltage V BE(sat) IC = 1 A, IB = 50 mA 0.9 1.2 V Transition frequency f T VCB = 10 V, IE = −50 mA, f = 200 MHz 150 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 23 35 pF (Common base, input open circuited) Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 50 V Collector-emitter voltage (Base open) V CEO 50 V Emitter-base voltage (Collector open) V EBO 5V Collector current I C 2A Peak collector current I CP 3A Collector power dissipation P C 1.5 W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE1 120 to 240 170 to 340 7.5±0.2 0.65±0.1 0.7±0.1 1.15±0.2 2.5±0.2 2.5±0.2 0.85±0.1 1.0±0.1 0.7±0.1 1.15±0.2 0.5±0.1
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0.4±0.1 4.5±0.2 0.8 C 0.8 C 3.8±0.2 16.0±1.0 10.8±0.2 2.05±0.2 90˚ 2.5±0.1 1: Emitter 2: Collector 3: Base
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VBE(sat) IC hFE IC fT IE PC Ta IC VCE VCE(sat) IC Cob VCB Rth t 0 160 40 120 80 0.4 0.8 1.2 1.6 2.0 Collector power dissipation PC (W) Ambient temperature Ta (°C) Without heat sink 01 2 21 0 48 6 120 100 Collector current IC (mA) Collector-emitter voltage VCE (V) IB=400µA 350µA 300µA 250µA 200µA 150µA 100µA 50µA Ta=25˚C 10−3 0.01 10−2 10−1 0.1 1 10 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) IC/IB=50 Ta=75˚C –25˚C 25˚C 0.01 0.01 0.1 100 0.1 1 10 Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) IC/IB=50 25˚C75˚C Ta=–25˚C 0.01 300 250 200 150 100 0.1 1 10 Forward current transfer ratio hFE Collector current IC (A) VCE=2V Ta=75˚C Ta=25˚C Ta=–25˚C −1 −10 −100 240 200 160 120 Transition frequency fT (MHz) Emitter current IE (mA) VCB=10V f=200MHz Ta=25˚C 10 100 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) IE=0 f=1MHz Ta=25˚C 10−1 104 102 103 103 10410210110−110−3 10−210−4 Time t (s) Thermal resistance Rth (°C/W) Without heat sink
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