2SD2177 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1434 I Features

  • Low collector to emitter saturation voltage VCE(sat)
  • Ccomplementary pair with 2SB1434
  • Allowing supply with the radial taping I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO 50 V Collector to emitter voltage V CEO 50 V Emitter to base voltage V EBO 5V Peak collector current I CP 3A Collector current I C 2A Collector power dissipation * PC 1W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 20 V, IE = 0 0.1 µA Collector to base voltage V CBO IC = 10 µA, IE = 05 0 V Collector to emitter voltage V CEO IC = 1 mA, IB = 05 0 V Emitter to base voltage V EBO IE = 10 µA, IC = 05 V Forward current transfer ratio *1 hFE1 *2 VCE = 2 V, IC = 200 mA 120 340 hFE2 VCE = 2 V, IC = 1 A 80 Collector to emitter saturation voltage *1 VCE(sat) IC = 1 A, IB = 50 mA 0.15 0.3 V Base to emitter saturation voltage *1 VBE(sat) IC = 1 A, IB = 50 mA 0.85 1.2 V Transition frequency f T VCB = 10 V, IE = −50 mA, f = 200 MHz 110 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 23 35 pF I Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 2.5±0.1 4.5±0.114.5±0.5 2.5±0.5 2.5 ±0.5 2.5±0.1 6.9±0.1 1.05 ±0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 −0.05 0.45 +0.1 −0.05 321 1.2±0.1 0.65max. 0.45 0.1 0.05 (HW Type) Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package Rank R S No-rank hFE1 120 to 240 170 to 340 120 to 340 Note) *1: Pulse measurement *2: Rank classification Product of no-rank is not classified and have no indication for rank. Note) *: Printed circuit board: Copper foil area of 1 cm 2 or more, and the board thickness of 1.7 mm for the collector portion

PC  Ta IC  VCE VCE(sat)  IC VBE(sat)  IC hFE  IC fT  IE Cob  VCB 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Ambient temperature Ta (°C) Collector power dissipation PC (W) 01 0 24 8 6 2.4 2.0 1.6 1.2 0.8 0.4 IB = 8 mA 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA Collector to emitter voltage VCE (V) Collector current IC (A) Ta = 25°C 0.001 0.003 0.01 0.03 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) IC / IB = 20 25°C −25°C Ta = 100°C 0.01 0.01 0.03 0.1 0.03 0.3 100 0.1 0.3 1 3 10 Base to emitter saturation voltage VBE(sat) (V) Collector current IC (A) IC / IB = 10 Ta = −25°C 25°C 100°C 0.01 0.1 1 100.03 0.3 3 100 200 300 500 400 Forward current transfer ratio hFE VCE = 2 V Collector current IC (A) Ta = 100°C 25°C −25°C 120 200 160 Transition frequency fT (MHz) Emitter current IE (mA) VCB = 10 V Ta = 25°C 3 10 30 100 Collector output capacitance Cob (pF) Collector to base voltage VCB (V) IE = 0 f = 1 MHz Ta = 25°C