2SD2167 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W (on 40 40 0.7mm ceramic board) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 31 4 V Collector-emitter voltage V CEO 31 4 V Emitter-base voltage V EBO 5V 2 A DC) 3A ( P u l s e ) * 1 0.5 W 2W * 2 Junction temperature Tj 150 Storage temperature T stg - 5 5t o+ 1 5 0 *1 Pw=20ms , duty=1/2 * 2W h e nm o u n t e do na4 0x4 0x0 . 7m mc e r a m i cb o a r d . Collector current I C Collector power dissipation P C

www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BV CBO IC=50ìA 27 V Collector-emitter breakdown voltage BV CEO IC=1mA 27 V Emitter-base breakdown voltage BV EBO IE=50ìA 5 V Collector cutoff current I CBO VCB=20V 1 ìA Emitter cutoff current I EBO VEB=5V 1 ìA IC=2A, IB=0.2A 1 V IC=1A, IB=50mA 0.25 0.5 V DC current transfer ratio h FE VCE=3V, IC=0.5A 56 270 Output capacitance f T VCE=3V, IE= -0.5A, f=30MHz 100 MHz Transition frequency C ob VCB=10V, IE=0A, f=1MHz 25 pF Collector-emitter saturation voltage V CE(sat) 2SD2167 hFE Classification Marking Rank N P Q hFE 56 120 82 180 120 270 DL