2SD2156 NAIS
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Technical content
Power Transistors 28D2156, 2SD2156A ee ont 28D2156, 2SD2156A Silicon NPN Triple-Diffused Planar Type High DC Current Gain (hee), Power Amplifier ™ Package Dimensions = Unit! mm ! @ Features & [ toamas, 4.4max. ! © High DC current gain (bre) St am 12.9max. : © Good linearity of DC current gain (hee) ols 7 © “Full Pack” package for simplified mounting on a heat sink with one F AT z screw hel | | P3101 {SL TITER: smas.50" Absolute Maximum Ratings (Te=25°C) ds (lt 15h. Item | Symbol Value Unit S| & i ihe Cotecor y oy EMI base voltage cB0 100 | rpasiens Py F080. Collector- 2sD2156 60 emitter voltage [spaisea| YoE® 7 v [ sein | Emitter-base voltage | Vewo 6 V 123 1: Base a 2: Collector Peak collector current 6 | A 3 : Emitter Collector current Te 3 A TO-220 Full Pack Package(a) Base current In 1 [oa Collector power | Tc=25C 25 dissipation Tan25c Pe 5 w Junction temperature Ty ~150 Cc Storage temperature Tas =55~ +150 c @ Electrical Characteristics (Tc=25°C) — Item [-Symbor [Condition min Typ. [max [Unit Collector cutoff | 28D2156_| | Vep=80V, Ip=0 [| 00 | aA current | 28D2156A " Von=100V, Ix=0 || 100 Collector cutoff current | Iceo Vor =40V, 1x=0 | 100 | #A Emitter cutoff current | Tepo Ven=6V, Ic=0 T 100 uA Collector- aspais6_ | | sem 2sma, xo | 60 \\ emitter voltage | “95p9156 ceo c= 25mA, In= ral | DC current gain |_hre* Vor=4V, [c= 05A [soo |_| 2500 | Collector-enitter saturation voltage | Vcr wan | Ic=2A, In=0.05A ee ee ee ‘Transition frequency fr [ Vee=12V,1c=02a,f=10MHz | | 50) | Mz *hre Classifications Ces {qf op fo hee | 500~1000 | 800~1500 | 1200~2500
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