Download PDF2SB1414 PANASONIC
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Publication date: February 2002 SJD00070BED 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 ■ Features
- Excellent current IC characteristics of forward current transfer ratio hFE vs. collector
- High transition frequency fT
- Allowing automatic insertion with radial taping ■ Absolute Maximum Ratings Ta = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 1: Emitter 2: Collector 3: Base 7.5±0.2 0.65±0.1 0.7±0.1 1.15±0.2 2.5±0.2 2.5±0.2 0.85±0.1 1.0±0.1 0.7±0.1 1.15±0.2 0.5±0.1
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0.4±0.1 4.5±0.2 0.8 C 0.8 C 3.8±0.2 16.0±1.0 10.8±0.2 2.05±0.2 90˚ 2.5±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −150 V Collector-emitter voltage (Base open) V CEO −150 V Emitter-base voltage (Collector open) V EBO −5V Collector current I C −1A Peak collector current I CP −1.5 A Collector power dissipation P C 1.5 W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V CEO IC = −100 µA, IB = 0 −150 V Emiter-base voltage (Collector open) V EBO IE = −10 µA, IC = 0 −5V Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −150 mA 90 330 hFE2 VCE = −5 V, IC = −500 mA 50 Collector-emitter saturation voltage *1 VCE(sat) IC = −500 mA, IB = −50 mA − 0.5 −2.0 V Base-emitter saturation voltage *1 VBE(sat) IC = −500 mA, IB = −50 mA −1.0 −2.0 V Transition frequency f T VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 30 pF (Common base, input open circuited) Rank Q R S hFE1 90 to 155 130 to 220 185 to 330
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PC Ta VCE(sat) IC VBE(sat) IC hFE IC fT IE Cob VCB Safe operation area R th t 0 160 40 120 80 2.0 1.6 1.2 0.8 0.4 Without heat sink Collector power dissipation PC (W) Ambient temperature Ta (°C) −1 −10 −100 −1 000 −0.001 −0.01 −0.1 −10 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) IC / IB = 10 −25°C Ta = 25°C 75°C −1 −10 −100 −1 000 IC / IB = 10 Ta = −25°C 75°C 25°C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (mA) −0.01 −0.1 −10 −100 −1 −10 −100 −1 000 300 250 200 150 100 VCE = −10 V Ta = 75°C 25°C −25°C Collector current IC (mA) Forward current transfer ratio hFE 1 10 100 IE = 0 f = 1 MHz TC = 25°C Emitter current IE (mA) Transition frequency fT (MHz) 100 200 300 400 −1 −10 −100 IE = 0 f = 1 MHz TC = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) Collector current IC (A) Collector-emitter voltage VCE (V) −1 −10 −100 −1 000 − 0.001 − 0.01 − 0.1 −10 ICP IC DC t = 10 ms Single pulse TC = 25°C 10−4 10410310210110−2 10−110−3 10−1 104 103 102 Thermal resistance Rth (°C/W) Time t (s) Without heat sink
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