Download PDF2SD2133 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
1Publication date: May 2003 SJD00244BED 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver ■ Features
- Low collector-emitter saturation voltage VCE(sat) ■ Absolute Maximum Ratings TC = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Unit: mm Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) V CEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) V EBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Forward current transfer ratio h FE1 *1, 2 VCE = 10 V, IC = 0.5 A 85 340 hFE2 *1 VCE = 5 V, IC = 1 A 50 100 hFE3 VCE = 10 V, IC = 1 mA 35 Collector-emitter saturation voltage V CE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base-emitter saturation voltage V BE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V Transition frequency f T VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 11 pF (Common base, input open circuited) Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 60 V Collector-emitter voltage (Base open) V CEO 50 V Emitter-base voltage (Collector open) V EBO 5V Collector current I C 1A Peak collector current I CP 1.5 A Collector power dissipation P C 1.5 W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 7.5±0.2 0.65±0.1 0.7±0.1 1.15±0.2 2.5±0.2 2.5±0.2 0.85±0.1 1.0±0.1 0.7±0.1 1.15±0.2 0.5±0.1
10.8 C 23
0.4±0.1 4.5±0.2 0.8 C 0.8 C 3.8±0.2 16.0±1.0 10.8±0.2 2.05±0.2 90˚ 2.5±0.1 1: Emitter 2: Collector 3: Base
2 SJD00244BED
VCE(sat) IC VBE(sat) IC hFE IC PC Ta IC VCE IC IB fT IE Cob VCB VCER RBE 0 160 40 120 80 0.4 0.8 1.2 1.6 2.0 Collector power dissipation PC (W) Ambient temperature Ta (°C) Without heat sink 01 2 21 0 48 6 1.2 1.0 0.8 0.6 0.4 0.2 Collector current IC (A) Collector-emitter voltage VCE (V) IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Ta=25˚C 1.2 1.0 0.8 0.6 0.4 0.2 01 2 21 0 48 6 Base current IB (mA) Collector current IC (A) VCE=10V Ta=25˚C 10−3 10−2 10−1 10 100 1 000 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) IC/IB=10 Ta=–25˚C Ta=25˚C Ta=75˚C 0.01 0.1 100 10 100 1 000 Base-emitter saturation voltage VBE(sat) (V) Collector current IC (mA) IC/IB=10 Ta=75˚C Ta=–25˚C Ta=25˚C 300 250 200 150 100 10 100 1 000 Forward current transfer ratio hFE Collector current IC (mA) VCE=10V Ta=75˚C Ta=25˚C Ta=–25˚C −1 −10 −100 120 200 160 Transition frequency fT (MHz) Emitter current IE (A) VCB=10V f=200MHz T C=25˚C 10 100 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) IE=0 f=1MHz Ta=25˚C 0.1 1 10 100 100 Base-emitter resistance RBE (kΩ) Collector-emitter voltage (Resistor between B and E) VCER (V) IC=10mA TC=25˚C
Rth t 10−1 104 102 103 103 10410210110−110−3 10−210−4 Time t (s) Thermal resistance Rth (°C/W) Without heat sink ICBO Ta Safe operation area 102 103 104 01 6 0 40 120 80 ICBO (Ta) ICBO (Ta = 25°C) VCE=10V Ambient temperature Ta (°C) 10−3 0.1 10−2 10−1 1 10 100 Collector current IC (A) Collector-emitter voltage VCE (V) ICP IC DC t=10ms Single pulse TC=25˚C
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications:
- Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
- Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.